Rhenium-doped MoS2 films

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Spectroscopic determination of phonon lifetimes in rhenium-doped MoS2 nanoparticles.

We investigated the infrared vibrational properties of pristine and Re-substituted MoS2 nanoparticles and analyzed the extracted phonon lifetimes in terms of multiple scattering events. Our measurements reveal both size- and doping-dependent changes that we attribute to grain boundary scattering and charge and mass effects, respectively. By contrast, Born charge is affected only by size. These ...

متن کامل

Interactions and superconductivity in heavily doped MoS2

We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS2. We show how the combination of the valley structure of the conduction band, the density dependence of the screening of the long-range Coulomb interactions, the short-range electronic repulsion, and the relative weakness of the electron-phonon interactions makes possible the exis...

متن کامل

Ferromagnetism in Transitional Metal-Doped MoS2 Monolayer.

Manipulating electronic and magnetic properties of two-dimensional (2D) transitional-metal dichalcogenides (TMDs) MX2 by doping has raised a lot of attention recently. By performing the first-principles calculations, we have investigated the structural, electronic, and magnetic properties of transitional metal (TM)-doped MoS2 at low and high impurity concentrations. Our calculation result indic...

متن کامل

Oxygen etching of thick MoS2 films.

Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2017

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.4995220